Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9236479
APP PUB NO 20150249152A1
SERIAL NO

14708405

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

One method disclosed includes, among other things, removing a sacrificial gate structure to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to define a fin structure in a layer of semiconductor material using a patterned hard mask exposed within the replacement gate cavity as an etch mask and forming a replacement gate structure in the replacement gate cavity around at least a portion of the fin structure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • GLOBALFOUNDRIES INC.;GLOBALFOUNDIRES, INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jacob, Ajey Poovannummoottil Albany, US 195 1585
Xie, Ruilong Niskayuna, US 1683 12538

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 12, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00