Graphene base transistor with reduced collector area
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United States of America Patent
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Jan 12, 2016
Issued Date -
N/A
app pub date -
Feb 12, 2014
filing date -
Mar 20, 2013
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| US | B2 | US9590081 | Nov 25, 2015 |
| US | B2 | US10158009 | Jan 18, 2017 |
International Classification(s)
- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 13.47 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 12, 2027 |
