Semiconductor device and manufacturing method of semiconductor device
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United States of America Patent
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Jan 12, 2016
Grant Date -
Aug 20, 2015
app pub date -
May 4, 2015
filing date -
Apr 16, 2013
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Abstract
A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion.
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