Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
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United States of America Patent
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Jan 5, 2016
Grant Date -
Jul 2, 2015
app pub date -
Mar 11, 2015
filing date -
Feb 17, 2011
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Abstract
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.
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