Compound semiconductor device and manufacturing method of the same
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United States of America Patent
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Dec 29, 2015
Grant Date -
Mar 19, 2015
app pub date -
Dec 5, 2014
filing date -
Mar 29, 2012
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Abstract
An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on the p-type semiconductor layer, in which Mg being an inert element of p-GaN is introduced into both sides of the gate electrode at the p-type semiconductor layer, and introduced portions of Mg are inactivated.
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