Cylindrical-shaped nanotube field effect transistor
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United States of America Patent
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Dec 29, 2015
Grant Date -
Jan 9, 2014
app pub date -
Mar 2, 2012
filing date -
Mar 2, 2011
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Abstract
A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (Ion/Ioff) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.
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