Terminal structure, and semiconductor element and module substrate comprising the same
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United States of America Patent
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Feb 9, 2016
Grant Date -
Feb 27, 2014
app pub date -
Aug 6, 2013
filing date -
Aug 6, 2013
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.
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