Method to control depth profiles of dopants using a remote plasma source
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United States of America Patent
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Dec 29, 2015
Grant Date -
Jun 26, 2014
app pub date -
Dec 26, 2012
filing date -
Dec 26, 2012
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Abstract
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.
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