Method of manufacturing a semiconductor device having a porous, low-k dielectric layer
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United States of America Patent
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Dec 29, 2015
Grant Date -
Jul 12, 2012
app pub date -
Sep 23, 2011
filing date -
Jan 10, 2011
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Abstract
The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.
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