Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
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United States of America Patent
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Dec 29, 2015
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Dec 6, 2012
app pub date -
Jul 9, 2010
filing date -
Feb 8, 2010
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Abstract
A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.
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