Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elements
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United States of America Patent
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Dec 22, 2015
Grant Date -
Nov 12, 2009
app pub date -
Apr 24, 2007
filing date -
Apr 25, 2006
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Abstract
A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.
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