Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
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United States of America Patent
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Dec 22, 2015
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Feb 13, 2014
app pub date -
Oct 18, 2013
filing date -
May 19, 2011
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Abstract
A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.
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