Compound semiconductor devices and methods for fabricating the same
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United States of America Patent
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Dec 15, 2015
Grant Date -
Aug 8, 2013
app pub date -
Oct 26, 2011
filing date -
Oct 26, 2010
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Abstract
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
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