Substrate treating apparatus and method
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United States of America Patent
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Dec 15, 2015
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N/A
app pub date -
Aug 21, 2014
filing date -
Aug 6, 2014
priority date (Note) -
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Abstract
The present invention disclosed herein relates to a substrate treating apparatus and method. The substrate treating method includes: providing a substrate on which an oxide layer is formed; treating the oxide layer with a first process gas in a plasma state to substitute the treated oxide layer with a by-product layer; and heating the substrate to remove the by-product layer at a temperature which is above a first heating temperature at which the by-product layer is decomposed and is above a second heating temperature that is a boiling point of an additive by-product generated while the by-product layer is decomposed.
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