High efficiency plasma source
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United States of America Patent
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Dec 15, 2015
Grant Date -
Jul 17, 2014
app pub date -
Jul 30, 2012
filing date -
Aug 19, 2011
priority date (Note) -
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Abstract
A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.
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