nanocrystals in thermoelectric materials
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United States of America Patent
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Dec 8, 2015
Grant Date -
Oct 31, 2013
app pub date -
Mar 25, 2013
filing date -
Mar 28, 2012
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Abstract
Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.
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