Shallow trench textured regions and associated methods
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United States of America Patent
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Dec 8, 2015
Grant Date -
Jan 15, 2015
app pub date -
Nov 19, 2013
filing date -
Jun 29, 2013
priority date (Note) -
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Abstract
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
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