Integrated circuit manufacturing for low-profile and flexible devices
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United States of America Patent
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Dec 8, 2015
Grant Date -
May 22, 2014
app pub date -
Jul 11, 2012
filing date -
Jul 11, 2011
priority date (Note) -
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Abstract
A process for manufacturing low-profile and flexible integrated circuits includes manufacturing an integrated circuit on a wafer having a thickness larger than the desired thickness. After the integrated circuit is manufactured the integrated circuit may be released with a portion of the wafer leaving a remainder of the bulk portion of the wafer. A second integrated circuit may be manufactured on the remainder of the wafer and the process repeated to manufacture additional integrated circuits from a single wafer. The integrated circuits may be released from the wafer by etching vias through the integrated circuit and into the wafer. The via may be used to start an etch process inside the wafer that undercuts the integrated circuit separating the integrated circuit from the wafer.
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