Frequency resistance access magnetic memory
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United States of America Patent
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Dec 8, 2015
Grant Date -
Jun 12, 2014
app pub date -
Nov 7, 2013
filing date -
Nov 7, 2012
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Abstract
The invention provides a multibit magnetic memory structure comprising a stack of two or more magnetic plaquettes, each of which has at least three distinct magnetic states. The invention provides for a new type of vertical memory where each layer encodes information in two degrees of freedom, which has the potential to increase the theoretical storage capacity by factor 4n. The information is read, through the resonant frequency of the stack or through a combination of the resonant frequency and resistance.
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