Conductivity based on selective etch for GaN devices and applications thereof
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United States of America Patent
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Dec 8, 2015
Grant Date -
Jan 10, 2013
app pub date -
Jul 26, 2012
filing date -
Jan 27, 2010
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Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
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