Copper compatible chalcogenide phase change memory with adjustable threshold voltage
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United States of America Patent
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Dec 1, 2015
Grant Date -
Jan 29, 2009
app pub date -
Jul 25, 2007
filing date -
Jul 25, 2007
priority date (Note) -
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Abstract
A phase change memory cell may include two or more stacked or unstacked series connected memory elements. The cell has a higher, adjustable threshold voltage. A copper diffusion plug may be provided within a pore over a copper line. By positioning the plug below the subsequent chalcogenide layer, the plug may be effective to block copper diffusion upwardly into the pore and into the chalcogenide material. Such diffusion may adversely affect the electrical characteristics of the chalcogenide layer.
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