Solid state imaging device and fabrication method for the same
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United States of America Patent
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Dec 1, 2015
Grant Date -
Apr 18, 2013
app pub date -
Oct 4, 2012
filing date -
Feb 2, 2007
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Abstract
A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.
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