Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
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United States of America Patent
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Dec 1, 2015
Grant Date -
Apr 2, 2015
app pub date -
Oct 1, 2013
filing date -
Oct 1, 2013
priority date (Note) -
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Abstract
A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.
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