Method and apparatus for plasma dicing a semi-conductor wafer
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United States of America Patent
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Dec 1, 2015
Grant Date -
Sep 24, 2015
app pub date -
Jun 2, 2015
filing date -
Mar 14, 2011
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Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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