Methods for forming crystalline IGZO through annealing

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United States of America Patent

PATENT NO 9202690
APP PUB NO 20150179448A1
SERIAL NO

14137717

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Abstract

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Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

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Patent OwnerAddress
INTERMOLECULAR INC2865 ZANKER ROAD SAN JOSE CA 95134
LG DISPLAY LTDLG TWIN TOWERS (EAST) 128 YEOUI-DAERO SEOUL 15

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brinkley, Stuart Sunnyvale, US 3 16
Chang, Yoon-Kyung Seoul, KR 5 18
Cho, Seon-Mee Santa Clara, US 45 3867
Kim, Min-Cheol Seoul, KR 51 514
Lee, Sang San Jose, US 74 659
Park, Kwon-Sik Seoul, KR 5 20
Shin, Woosup Seoul, KR 16 123

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