Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
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United States of America Patent
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Dec 1, 2015
Grant Date -
Jun 11, 2015
app pub date -
Dec 9, 2013
filing date -
Dec 9, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip. The tip of the Fin may then be sharpened by the focused ion beam.
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International Classification(s)
- 2013 Application Filing Year
- H01J Class
- 2042 Applications Filed
- 1790 Patents Issued To-Date
- 87.66 % Issued To-Date
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- H01J Class
- 0 % this patent is cited more than
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