P-type oxide alloys based on copper oxides, tin oxides, tin—copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof
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United States of America Patent
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Nov 24, 2015
Grant Date -
Mar 28, 2013
app pub date -
Apr 6, 2011
filing date -
Apr 6, 2010
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Abstract
The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05≦x<1 and 0.01≦y≦0.9]; of tin (OSn)αx with embedded metal tin (Snβx) [(OSn)z+(Sn1-2)w wherein 0.05≦z<1 and 0.01≦w≦0.9]; Cucx—Snβx alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cuα—Snβ)b with 0<α<2 and 0<β<2, wherein 0.05≦a<1 and 0.01≦b≦0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(O—Ni)a+(Niα—Snβ)b with 0<α<2 and 0<β<2, wherein 0.05≦a<1 and 0.01≦b≦0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.
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