Semiconductor circuit structure and process of making the same
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United States of America Patent
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Nov 24, 2015
Grant Date -
Oct 10, 2013
app pub date -
Sep 5, 2012
filing date -
Apr 6, 2012
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Abstract
A semiconductor circuit structure and process of making the same is provided in the present invention, comprising the steps of providing a substrate having a target layer and a hard mask layer, forming a patterned small core body group and a large core body group on the hard mask layer, forming a spacer material layer conformally on the substrate and the core body groups, forming filling bodies in each recess of the spacer material layer, performing a first etching process to remove exposed spacer material layer, using the filling bodies as a mask to perform a second etching process for patterning the hard mask layer, and using the patterned hard mask layer as a mask to perform a third etching process for patterning the conductive layer.
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