Low-field magnetic domain wall injection pad and high-density storage wire
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United States of America Patent
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Nov 24, 2015
Grant Date -
May 12, 2011
app pub date -
Nov 12, 2010
filing date -
Nov 12, 2009
priority date (Note) -
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Abstract
Disclosed herein are magnetic storage devices and uses therefore. The devices comprise an injection pad and a nanowire extending from an outer edge of the injection pad. The injection pad and the nanowire of the disclosed magnetic storage devices have a geometry that is designed to optimize high density memory storage via low magnetic field domain wall shifting. The devices may be utilized, for example, for generating and storing magnetic domain walls for application in memory devices, sensor devices, and logic devices.
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