HIGH-VOLTAGE LEVEL CONVERSION CIRCUIT

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United States of America Patent

APP PUB NO 20150341022A1
SERIAL NO

14464741

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Abstract

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The present disclosure provides a high-voltage level conversion circuit at least comprising a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, a third PMOS transistor, a third NMOS transistor, a fourth PMOS transistor and a fourth NMOS transistor for receiving an input signal have a first voltage level and a second voltage level and converting the input signal to an output signal having a third voltage level and a fourth voltage level. Compared to conventional high-voltage level conversion circuits the provided high-voltage level conversion circuit occupies less circuit area.

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Patent Owner(s)

Patent OwnerAddress
ILI TECHNOLOGY CORP10F -1 NO 1 TAIYUAN 2ND ST ZHUBEI CITY HSINCHU COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIU, HSI-EN KAOHSIUNG CITY, TW 7 0
YEH, SUNG-YAU HSINCHU COUNTY, TW 8 62

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