Solar cell made using a barrier layer between p-type and intrinsic layers

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United States of America Patent

PATENT NO 9190549
APP PUB NO 20130221373A1
SERIAL NO

13406815

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Abstract

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A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504
BAY ZU PRECISION CO LTDNO 23 SEC 2 HUANDONG ROAD XINSHI DIST TAINAN CITY 74144

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tze-Chiang Yorktown Heights, US 103 1434
Hong, Augustin J White Plains, US 63 1079
Huang, Chien-Chih Pingtung, TW 47 210
Huang, Yu-Wei Tainan, TW 42 221
Kim, Jeehwan Los Angeles, US 249 1355
Sadana, Devendra K Pleasantville, US 897 10959
Tseng, Chih-Fu Tainan, TW 4 10

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