Spin polarization transistor element
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United States of America Patent
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Nov 17, 2015
Grant Date -
Jul 16, 2015
app pub date -
Jul 25, 2013
filing date -
Aug 14, 2012
priority date (Note) -
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Abstract
There are provided with a source part made of a ferromagnetic material magnetized in a first direction, a drain part made of a ferromagnetic material magnetized in the first direction, and separated from and arranged in parallel to the source part, a channel part arranged between the source part and the drain part, and bonded with the source part and the drain part directly or through a tunnel layer, and a circularly polarized light irradiation part that irradiates the channel part with circularly polarized light for controlling a direction of spin of the channel part.
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