Metal coating for indium bump bonding
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United States of America Patent
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Nov 17, 2015
Grant Date -
Dec 29, 2011
app pub date -
Jun 24, 2011
filing date -
Jun 24, 2010
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Abstract
A process of making efficient metal bump bonding with relative low temperature, preferably lower than the melting point of Indium, is described. To obtaining a lower processing temperature (preferred embodiments have a melting point of <100° C.), a metal or alloy layer is deposited on the indium bump surface. Preferably, the material is chosen such that the metal or alloy forms a passivation layer that is more resistant to oxidation than the underlying indium material. The passivation material is also preferably chosen to form a low melting temperature alloy with indium at the indium bump surface. This is typically accomplished by diffusion of the passivation material into the indium to form a diffusion layer alloy. Various metals, including Ga, Bi, Sn, Pb and Cd, that can be used to form a binary to quaternary low melting point alloy with indium. In addition, diffusion of metal such as Sn, Sn—Zn into Ga—In alloy; Sn, Cd, Pb—Sn into Bi—In alloy; Cd, Zn, Pb, Pb—Cd into Sn—In alloy can help adjust the melting point of the alloy.
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