Plasma immersion ion milling apparatus and method

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United States of America Patent

PATENT NO 9190239
APP PUB NO 20120222952A1
SERIAL NO

13265051

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Abstract

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Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.

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Patent Owner(s)

Patent OwnerAddress
NEW OPTICS LTD315 HYUAM-RO 392BEON-GIL NAM-MYEON YANGJU-SI GYEONGGI-DO 482-872

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Sung Il Gyeongsangnam-do, KR 4 40
Jeon, Jeong Woo Gyeongsangnam-do, KR 6 97
Kim, Hyeon Taeg Gyeongsangnam-do, KR 2 3
Kim, Jong Moon Daegu, KR 242 3795
Kim, Pan Kyeom Gyeongsangnam-do, KR 9 37
Nikiforov, S A Gyeongsangnam-do, KR 2 8
Oh, Hyeon Seok Gyeonggi-do, KR 6 36

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