Aluminum nitride substrate for circuit board and production method thereof
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United States of America Patent
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Nov 17, 2015
Grant Date -
Jun 13, 2013
app pub date -
May 24, 2011
filing date -
Jun 8, 2010
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Abstract
Disclosed is an aluminum nitride substrate for a circuit board, the substrate having aluminum nitride crystal grains with an average grain size of 2 to 5 μm and a thermal conductivity of at least 170 W/m·K. The aluminum nitride substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400° C. Also provided is a method for producing the aluminum nitride substrate, including the steps of heating a raw material containing an aluminum nitride powder to 1500° C. at a pressure of at most 150 Pa, then increasing and holding the temperature at 1700 to 1900° C. in a pressurized atmosphere of at least 0.4 MPa using a non-oxidizing gas, then cooling to 1600° C. at a cooling rate of at most 10° C./min.
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