Thin film transistor array manufacturing method
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United States of America Patent
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Nov 10, 2015
Grant Date -
Jul 30, 2015
app pub date -
Nov 9, 2012
filing date -
Oct 19, 2012
priority date (Note) -
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Abstract
A TFT array manufacturing method is disclosed herein and includes steps: forming a first metal layer on a substrate; depositing a first insulating layer to cover the first metal layer; forming an oxide semiconductor layer on the first insulating layer in a TFT area; forming a second insulating layer on the first insulating layer and the oxide semiconductor layer; etching the second insulating layer in the TFT area to expose the oxide semiconductor layer and etching the second insulating layer and the first insulating layer in a signal wire area simultaneously to expose the first metal layer; and forming a second metal layer on the second insulating layer of the TFT area, and the second metal layer being connected the oxide semiconductor layer, and forming the second metal layer on the first metal layer of the signal wire area to contact the first metal, layer.
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