Memory cell support lattice

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United States of America Patent

PATENT NO 9184167
APP PUB NO 20140054745A1
SERIAL NO

13590791

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Abstract

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Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Busch, Brett Boise, US 11 103
Lee, Che-Chi Banciao, TW 11 45
Song, Zhimin Boise, US 3 7

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