Method for forming impurity layer, exposure mask therefore and method for producing solid-state imaging device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 3, 2015
Grant Date -
Mar 29, 2012
app pub date -
Sep 6, 2011
filing date -
Sep 21, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for forming an impurity layer, includes forming a resist material 16 on a surface portion of a semiconductor substrate 15; exposing the resist material using a grating mask 10 comprising a light transmission region 11 including a plurality of unit light transmission regions 14 being arranged two-dimensionally, each being composed of a plurality of minute partial sections 13A to 13D having different transmittance; forming a resist layer 18 on the surface of the semiconductor substrate 15 by developing the exposed resist material, the resist layer including a thin film region 17 having a film thickness corresponding to the transmittance of the light transmission region; implanting ions to the semiconductor substrate 15 via the thin film region; and diffusing ion groups 21A′, 21B′, 21C′, and 21D′ that are implanted at the same depth such that the ion groups are coupled in a lateral direction.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully