Techniques for fabricating fine-pitch micro-bumps

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United States of America Patent

PATENT NO 9177929
APP PUB NO 20140342545A1
SERIAL NO

14276481

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Abstract

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Techniques for fabricating fine-pitch micro-bumps are disclosed. According to one embodiment, a fabrication process may comprise the following steps: depositing a dielectric layer on a wafer; forming a pattern of through holes in the dielectric layer; depositing a seed metal layer on top of the dielectric layer and inside the through holes; depositing a layer of UBM metal on top of the seed metal layer (including inside the holes), and further filling the holes with a low melting point metal; performing chemical mechanical polishing (CMP) to remove conductive material(s) outside the holes and/or on the surface of the dielectric layer, such that the metal stacks of adjacent holes are insulated by the dielectric material between them; and etching the dielectric material surrounding the holes to cause the tip of the metal stacks to extend slightly higher than the surrounding dielectric surface, thereby forming fine-pitch micro-bumps.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL CENTER FOR ADVANCED PACKAGING CO LTD214028 BUILDING D1 CHINA SENSOR NETWORK INTERNATIONAL INNOVATION PARK NO 200 LINGHU AVENUE NEW DISTRICT WUXI CITY JIANGSU PROVINCE WUXI CITY JIANGSU PROVINCE 214028

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhang, Wenqi Jiangsu, CN 38 141

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