Power semiconductor device and method therefor
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United States of America Patent
Stats
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Nov 3, 2015
Grant Date -
Aug 6, 2015
app pub date -
Apr 14, 2015
filing date -
Jan 10, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
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Cited Art Landscape
Patent Citation Ranking
- 13 Citation Count
- H01L Class
- 71.29 % this patent is cited more than
- 10 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 3, 2027 |
