Method for synthesis of high quality large area bulk gallium based crystals
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 3, 2015
Grant Date -
Oct 20, 2011
app pub date -
Oct 11, 2010
filing date -
Oct 9, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully