Thin film transistor and method of manufacturing the same and display device including the same
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United States of America Patent
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Oct 27, 2015
Grant Date -
Feb 20, 2014
app pub date -
Nov 30, 2012
filing date -
Aug 14, 2012
priority date (Note) -
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Abstract
Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.
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