Semiconductor device having a trench gate structure and manufacturing method of the same
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United States of America Patent
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Oct 27, 2015
Grant Date -
Sep 4, 2014
app pub date -
May 15, 2014
filing date -
Apr 12, 2011
priority date (Note) -
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Abstract
In a manufacturing method of a semiconductor device, a trench is defined in a semiconductor substrate, and an adjuster layer having a first conductivity type impurity concentration higher than a drift layer is formed at a portion of the semiconductor substrate adjacent to a bottom wall of the trench. A channel layer is formed by introducing second conductivity type impurities to a portion of the semiconductor substrate adjacent to a sidewall of the trench and between the adjustment layer and a main surface of the semiconductor substrate while restricting the channel layer from extending in a depth direction of the trench by the adjustment layer.
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