Method for manufacturing a group III nitride substrate using a chemical lift-off process

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United States of America Patent

PATENT NO 9171717
APP PUB NO 20130193558A1
SERIAL NO

13877082

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Abstract

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The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

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Patent Owner(s)

Patent OwnerAddress
KOREA PHOTONICS TECHNOLOGY INSTITUTE9 CHEOMDANVENTURE-RO 108BEON-GIL BUK-GU GWANGJU 61007 61007

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Jong Hyeob Daejeon, KR 6 35
Chung, Tae Hoon Seoul, KR 2 11
Jeon, Dae Woo Jeollabuk-do, KR 1 11
Ju, Jin Woo Gwangju, KR 2 24
Jung, Tak Gwangju, KR 1 11
Kim, Ja Yeon Gwangju, KR 11 54
Kim, Yoon Seok Gwangju, KR 7 13
Lee, Sang Hern Gwangju, KR 2 12
Oh, Hwa Seop Gwangju, KR 1 11
Park, Hyung Jo Gwangju, KR 23 179

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