Semiconductor device including enhanced variability
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United States of America Patent
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Oct 20, 2015
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Jul 23, 2015
app pub date -
Jan 20, 2014
filing date -
Jan 20, 2014
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Abstract
A Physical Unclonable Function (PUF) semiconductor device includes a semiconductor substrate, and a well formed in the semiconductor substrate. The well includes a first region having a first concentration of ions, and at least one second region having a second concentration that is less than the first concentration. First and second FETs are formed on the well. The first and second FETs have a voltage threshold mismatch with respect to one another based on the first region and the at least one second region.
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