Semiconductor structure able to receive electromagnetic radiation, semiconductor component and process for fabricating such a semiconductor structure
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United States of America Patent
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Oct 20, 2015
Grant Date -
Oct 23, 2014
app pub date -
Nov 27, 2012
filing date -
Nov 29, 2011
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Abstract
A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.
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