Enhanced deposition of layer on substrate using radicals

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United States of America Patent

PATENT NO 9163310
APP PUB NO 20120213945A1
SERIAL NO

13397590

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

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Patent Owner(s)

Patent OwnerAddress
VEECO ALD INC3191 LAURELVIEW COURT FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Sang In Sunnyvale, US 99 6600

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