Importance

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Abstract

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N₂ containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10⁻³ Torr or less, Si containing gas: 1×10⁻³˜3×10⁻¹ Torr and N containing gas: 7×10⁻³˜6×10⁻¹ Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.

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First Claim