Elimination of first wafer effect for PECVD films
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United States of America Patent
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Oct 13, 2015
Grant Date -
Dec 6, 2007
app pub date -
May 31, 2007
filing date -
Jun 5, 2006
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Abstract
The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.
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