Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plate
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United States of America Patent
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Oct 6, 2015
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app pub date -
Sep 12, 2012
filing date -
May 24, 2012
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Abstract
An edge terminal structure of a power semiconductor device is provided that includes a substrate, a first and a second electrodes disposed on a surface and a back of the substrate respectively, a first field plate, and a second field plate. The power semiconductor device includes an active area and an edge termination area, and there is a trench in a surface of the substrate in the edge terminal area beside the active area. The first field plate is disposed on a sidewall of the trench and extends on a tail of the trench, and it includes at least a L-shaped electric-plate, a gate insulation layer under the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes at least an insulation layer and the first electrode thereon. The insulation layer covers the tail of the trench and a tail of the L-shaped electric-plate further.
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